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Silicon Micromachined TSVs for Backside Interconnection of Ultra-Small Pressure Sensors. | LitMetric

Silicon Micromachined TSVs for Backside Interconnection of Ultra-Small Pressure Sensors.

Micromachines (Basel)

State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Published: July 2023

AI Article Synopsis

  • - The paper discusses a tiny absolute pressure sensor designed for high-performance and flexible applications, utilizing silicon-micromachined through-silicon vias (TSVs) for signal transmission from the back of the chip, avoiding fragile front-side leads.
  • - A unique beam-island structure minimizes diaphragm deflection, enhancing the sensor's accuracy and linearity, resulting in a compact size of just 0.4 mm × 0.6 mm while maintaining high sensitivity.
  • - The sensors show impressive specs, such as a sensitivity of 0.84 mV/kPa and low nonlinearity, making them suitable for tactile sensing in devices like wearable wristwatches.

Article Abstract

This paper presents an ultra-small absolute pressure sensor with a silicon-micromachined TSV backside interconnection for high-performance, high spatial resolution contact pressure sensing, including flexible-substrate applications. By exploiting silicon-micromachined TSVs that are compatibly fabricated with the pressure sensor, the sensing signals are emitted from the chip backside, thereby eliminating the fragile leads on the front-side. Such a design achieves a flat and fully passivated top surface to protect the sensor from mechanical damage, for reliable direct-contact pressure sensing. A single-crystal silicon beam-island structure is designed to reduce the deflection of the pressure-sensing diaphragm and improve output linearity. Using our group-developed microholes interetch and sealing (MIS) micromachining technique, we fabricated ultra-small piezoresistive pressure sensors with the chip size as small as 0.4 mm × 0.6 mm, in which the polysilicon-micromachined TSVs transfer the signal interconnection from the front-side to the backside of the wafer, and the sensor chips can be densely packaged on the flexible substrate via the TSVs. The ultra-small pressure sensor has high sensitivity of 0.84 mV/kPa under 3.3 V of supply voltage and low nonlinearity of ±0.09% full scale (FS) in the measurement range of 120 kPa. The proposed pressure sensors with backside-interconnection TSVs hold promise for tactile sensing applications, including flexible sensing of wearable wristwatches.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384946PMC
http://dx.doi.org/10.3390/mi14071448DOI Listing

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