This research study examines the high-temperature dielectric relaxation and electric conduction mechanisms in ()LaCoO-(1 - )NaBiTiO samples, where is 0.05, 0.10, and 0.15. The findings demonstrate that all the samples exhibit two dielectric transitions: first, a frequency-dispersive shoulder at a lower temperature () around 425-450 K, which is associated with polar nanoregions (PNRs), and second, from ferroelectric to paraelectric transition at the Curie temperature () approximately between 580 and 650 K. The impedance analysis reveals the negative temperature coefficient of resistance behavior of the specimens. The broad and asymmetric relaxation peaks obtained from modulus spectroscopy demonstrate a wide range of relaxations, suggesting non-Debye-type behavior. Furthermore, the conductivity studies provide insights into understanding the transport phenomena in the samples. The oxygen vacancies resulting from the addition of LaCoO into the NaBiTiO ceramics are responsible for the relaxation and conduction processes, and the charge carrier is doubly ionized oxygen ion vacancies. All samples except for LCNBT10 at 1 kHz exhibit a negative magnetodielectric response.
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http://dx.doi.org/10.1021/acsomega.3c04490 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Low-loss microwave dielectrics are of significant importance for the miniaturization and integration of microwave devices. In this paper, the ceramics of nominal composition MgTiO ( = 3-6) are synthesized, and the correlations among their phase compositions, defect behaviors, and microwave dielectric properties are systematically investigated. The analyses indicate that the MgTiO ceramics are a biphasic system consisting of hexagonal ilmenite-structured MgTiO and cubic spinel-structured MgTiO.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
School of Physics and Electronic Information, Yan'an University, Yan'an 716000, China.
In this work, the rare earth element Ce was incorporated into the A-site of SrBaNbO ferroelectric ceramics, which was prepared using the conventional solid state reaction method and sintered under different procedures. A comprehensive investigation was conducted to assess the impact of Ce doping and varying sintering procedures on both the relaxor characteristics and electrical properties of the ceramics. When sintered at 1300 °C for 4 h, the grains exhibited an isometric shape.
View Article and Find Full Text PDFPLoS One
January 2025
Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh.
High dielectric constants with less dielectric loss composites is highly demandable for technological advancements across various fields, including energy storage, sensing, and telecommunications. Their significance lies in their ability to enhance the performance and efficiency of a wide range of devices and systems. In this work, the dielectric performance of graphene oxide (GO) reinforced plasticized starch (PS) nanocomposites (PS/GO) for different concentrations of GO nanofiller was studied.
View Article and Find Full Text PDFSci Rep
January 2025
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, 710071, China.
(AlO)(HfO) films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO was examined through electrical measurements. The results showed that increasing Al content raised the flat-band voltage, reduced the interface state density (D), and significantly lowered the leakage current at a given voltage.
View Article and Find Full Text PDFNano Lett
January 2025
Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China.
Coulomb attraction with weak screening can trigger spontaneous exciton formation and condensation, resulting in a strongly correlated many-body ground state, namely, the excitonic insulator. One-dimensional (1D) materials natively have ineffective dielectric screening. For the first time, we demonstrate the excitonic instability of single atomic wires of transition metal telluride MTe (M = Mo, W), a family of 1D van der Waals (vdW) materials accessible in the laboratory.
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