Mechanical pressure controls the structural, electric, and magnetic order in solid-state systems, allowing tailoring of their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry-breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we study the pressure-driven response in a nonferroelastic ferroelectric, ErMnO, where the classical stress-strain coupling is absent and the domain formation is governed by creation-annihilation processes of topological defects. By annealing ErMnO polycrystals under variable pressures in the MPa regime, we transform nonferroelastic vortex-like domains into stripe-like domains. The width of the stripe-like domains is determined by the applied pressure as we confirm by three-dimensional phase field simulations, showing that pressure leads to oriented layer-like periodic domains. Our work demonstrates the possibility to utilize mechanical pressure for domain engineering in nonferroelastic ferroelectrics, providing a lever to control their dielectric and piezoelectric responses.
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http://dx.doi.org/10.1021/acs.nanolett.3c01638 | DOI Listing |
Nano Lett
August 2023
Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7034 Trondheim, Norway.
Mechanical pressure controls the structural, electric, and magnetic order in solid-state systems, allowing tailoring of their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry-breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we study the pressure-driven response in a nonferroelastic ferroelectric, ErMnO, where the classical stress-strain coupling is absent and the domain formation is governed by creation-annihilation processes of topological defects.
View Article and Find Full Text PDFSci Rep
January 2021
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Praha 8, Czech Republic.
The intrinsic mobile interfaces in ferroelectrics-the domain walls can drive and enhance diverse ferroelectric properties, essential for modern applications. Control over the motion of domain walls is of high practical importance. Here we analyse theoretically and show experimentally epitaxial ferroelectric films, where mobile domain walls coexist and interact with immobile growth-induced interfaces-columnar boundaries.
View Article and Find Full Text PDFUltramicroscopy
February 2017
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA.
A novel technique, which directly and nondestructively maps polar domains using electron backscatter diffraction (EBSD) is described and demonstrated. Through dynamical diffraction simulations and quantitative comparison to experimental EBSD patterns, the absolute orientation of a non-centrosymmetric crystal can be determined. With this information, the polar domains of a material can be mapped.
View Article and Find Full Text PDFPhys Rev Lett
November 2014
Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland.
We reveal a strong elastic interaction between nonferroelastic domain walls in ferroelectric thin films. This interaction, having no analogue in bulk materials, is governed by elastic fields that are associated with the domain walls and extends to distances comparable to the film thickness. Such elastic widening of the nonferroelastic domain walls is shown to be particularly strong in common ferroelectric perovskites.
View Article and Find Full Text PDFJ Am Chem Soc
January 2012
Department of Materials Science and Engineering and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea.
Multiferroics have received a great deal of attention because of their fascinating physics of order-parameter cross-couplings and their potential for enabling new device paradigms. Considering the rareness of multiferroic materials, we have been exploring the possibility of artificially imposing ferroelectricity by structurally tailoring antiferromagnets in thin-film forms. YbFeO(3) (YbFO hereafter), a family of centrosymmetric rare-earth orthoferrites, is known to be nonferroelectric (space group Pnma).
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