In recent years, metal halide perovskites have received significant attention as materials for next-generation optoelectronic devices owing to their excellent optoelectronic properties. The unprecedented rapid evolution in the device performance has been achieved by gaining an advanced understanding of the composition, crystal growth, and defect engineering of perovskites. As device performances approach their theoretical limits, effective optical management becomes essential for achieving higher efficiency. In this review, we discuss the status and perspectives of nano to micron-scale patterning methods for the optical management of perovskite optoelectronic devices. We initially discuss the importance of effective light harvesting and light outcoupling via optical management. Subsequently, the recent progress in various patterning/texturing techniques applied to perovskite optoelectronic devices is summarized by categorizing them into top-down and bottom-up methods. Finally, we discuss the perspectives of advanced patterning/texturing technologies for the development and commercialization of perovskite optoelectronic devices.
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http://dx.doi.org/10.1007/s40820-023-01154-x | DOI Listing |
Sci Adv
January 2025
Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore.
Combining physics with computational models is increasingly recognized for enhancing the performance and energy efficiency in neural networks. Physical reservoir computing uses material dynamics of physical substrates for temporal data processing. Despite the ease of training, building an efficient reservoir remains challenging.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
The integration of mid-infrared (MIR) photodetectors with built-in encryption capabilities holds immense promise for advancing secure communications in decentralized networks and compact sensing systems. However, achieving high sensitivity, self-powered operation, and reliable performance at room temperature within a miniaturized form factor remains a formidable challenge, largely due to constraints in MIR light absorption and the intricacies of embedding encryption at the device level. Here, a novel on-chip metamaterial-enhanced, 2D tantalum nickel selenide (Ta₂NiSe₅)-based photodetector, meticulously designed with a custom-engineered plasmonic resonance microstructure to achieve self-powered photodetection in the nanoampere range is unveiled.
View Article and Find Full Text PDFJ Am Chem Soc
January 2025
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China.
High mobility emissive organic semiconductors (HMEOSCs) are a kind of unique semiconducting material that simultaneously integrates high charge carrier mobility and strong emission features, which are not only crucial for overcoming the performance bottlenecks of current organic optoelectronic devices but also important for constructing high-density integrated devices/circuits for potential smart display technologies and electrically pumped organic lasers. However, the development of HMEOSCs is facing great challenges due to the mutually exclusive requirements of molecular structures and packing modes between high charge carrier mobility and strong solid-state emission. Encouragingly, considerable advances on HMEOSCs have been made with continuous efforts, and the successful integration of these two properties within individual organic semiconductors currently presents a promising research direction in organic electronics.
View Article and Find Full Text PDFACS Nano
January 2025
MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Province Engineering Research Center of Quantum Dot Display, School of Materials Science and Engineering, Institute of Optoelectronics & Nanomaterials, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
Room temperature (RT) synthesized mixed bromine and chlorine CsPbBrCl perovskite quantum dots (Pe-QDs) offer notable advantages for blue quantum dot light-emitting diodes (QLEDs), such as cost-effective processing and narrow luminescence peaks. However, the efficiency of blue QLEDs using these RT-synthesized QDs has been limited by inferior crystallinity and deep defect presence. In this study, we demonstrate a precise approach to constructing high-quality gradient core-shell (CS) structures of CsPbBrCl QD through anion exchange.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Institute of Information Photonics Technology, School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China.
Nonlinear optics, a critical branch of modern optics, presents unique potential in the study of two-dimensional (2D) magnetic materials. These materials, characterized by their ultra-thin geometry, long-range magnetic order, and diverse electronic properties, serve as an exceptional platform for exploring nonlinear optical effects. Under strong light fields, 2D magnetic materials exhibit significant nonlinear optical responses, enabling advancements in novel optoelectronic devices.
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