Optimization of Ternary InGaN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs.

Red, green, and blue light InGaN multiple quantum wells have been grown on GaN/γ-LiAlO microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InGaN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InGaN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InGaN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.