Reversible control of ferroelectric polarization is essential to overcome the heterocatalytic kinetic limitation. This can be achieved by creating a surface with switchable electron density; however, owing to the rigidity of traditional ferroelectric oxides, achieving polarization reversal in piezocatalytic processes remains challenging. Herein, sub-nanometer-sized Hf Zr O (HZO) nanowires with a polymer-like flexibility are synthesized. Oxygen K-edge X-ray absorption spectroscopy and negative spherical aberration-corrected transmission electron microscopy reveal an orthorhombic (Pca2 ) ferroelectric phase of the HZO sub-nanometer wires (SNWs). The ferroelectric polarization of the flexible HZO SNWs can be easily switched by slight external vibration, resulting in dynamic modulation of the binding energy of adsorbates and thus breaking the "scaling relationship" during piezocatalysis. Consequently, the as-synthesized ultrathin HZO nanowires display superb water-splitting activity, with H production rate of 25687 µmol g h under 40 kHz ultrasonic vibration, which is 235 and 41 times higher than those of non-ferroelectric hafnium oxides and rigid BaTiO nanoparticles, respectively. More strikingly, the hydrogen production rates can reach 5.2 µmol g h by addition of stirring exclusively.
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http://dx.doi.org/10.1002/adma.202303018 | DOI Listing |
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December 2024
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice matching and the high-temperature rapid thermal annealing process, which are not always compatible with CMOS fabrication. However, the advent of the ferroelectric semiconductor α-InSe offers a compelling solution to these challenges.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
December 2024
Nankai University, School of Materials Science and Engineering, CHINA.
Chiral hybrid organic-inorganic metal halides (HOMHs) hold great promise in broad applications ranging from ferroelectrics, spintronics to nonlinear optics, owing to their broken inversion symmetry and tunable chiroptoelectronic properties. Typically, chiral HOMHs are constructed by chiral organic cations and metal anion polyhedra, with the latter regarded as optoelectronic active units. However, the primary design approaches are largely constrained to regulation of general components within structural formula.
View Article and Find Full Text PDFAdv Mater
December 2024
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.
HfO-based multi-bit ferroelectric memory combines non-volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing. However, some challenges remain, notably polarization variation, high operation voltage, and poor endurance performance. Here we show Hf ZrO (x = 0.
View Article and Find Full Text PDFAdv Mater
December 2024
Wuzhen Laboratory, Jiaxing, 314500, P. R. China.
Phase boundary is highly recognized for its capability in engineering various physical properties of ferroelectrics. Here, field-induced polarization rotation is reported in a high-performance (K, Na)NbO-based ferroelectric system at the rhombohedral-tetragonal phase boundary. First, the lattice structure is examined from both macroscopic and local scales, implementing Rietveld refinement and pair distribution function analysis, respectively.
View Article and Find Full Text PDFAdv Mater
December 2024
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
Through the stacking technique of 2D materials, the interfacial polarization can be switched by an interlayer sliding, known as sliding ferroelectricity, which is advantageous in ultra-thin thickness, high switching speed, and high fatigue resistance. However, uncovering the relationship between the sliding path and the polarization state in rhombohedral-stacked materials remains a challenge, which is the key to 2D sliding ferroelectricity. Here, layer-dependent multidirectional sliding ferroelectricity in rhombohedral-stacked InSe (γ-InSe) is reported via dual-frequency resonance tracking piezoresponse force microscopy and conductive atomic force microscopy.
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