A Researcher's Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices.

ACS Nano

Department of Materials Science and Nanoengineering, Rice University, 6100 Main Street, Houston, Texas 77005, United States.

Published: July 2023

Current silicon technology is on the verge of reaching its performance limits. This aspect, coupled with the global chip shortage, makes a solid case for steering our attention toward the accelerated commercialization of other electronic materials. Among the available suite of emerging electronic materials, two-dimensional materials, including transition metal dichalcogenides (TMDs), exhibit improved short-channel effects, high electron mobility, and integration into CMOS-compatible processing. While these materials may not be able to replace silicon at the current stages of development, they can supplement Si in the form of Si-compatible CMOS processing and be manufactured for tailored applications. However, the major hurdle in the path of commercialization of such materials is the difficulty in producing their wafer-scale forms, which are not necessarily single crystalline but on a large scale. Recent but exploratory interest in 2D materials from industries, such as TSMC, necessitates an in-depth analysis of their commercialization potential based on trends and progress in entrenched electronic materials (Si) and ones with a short-term commercialization potential (GaN, GaAs). We also explore the possibility of unconventional fabrication techniques, such as printing, for 2D materials becoming more mainstream and being adopted by industries in the future. In this Perspective, we discuss aspects to optimize cost, time, thermal budget, and a general pathway for 2D materials to achieve similar milestones, with an emphasis on TMDs. Beyond synthesis, we propose a lab-to-fab workflow based on recent advances that can operate on a low budget with a mainstream full-scale Si fabrication unit.

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Source
http://dx.doi.org/10.1021/acsnano.3c01927DOI Listing

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