Synaptic devices that mimic biological synapses are considered as promising candidates for brain-inspired devices, offering the functionalities in neuromorphic computing. However, modulation of emerging optoelectronic synaptic devices has rarely been reported. Herein, a semiconductive ternary hybrid heterostructure is prepared with a D-D'-A configuration by introducing polyoxometalate (POM) as an additional electroactive donor (D') into a metalloviologen-based D-A framework. The obtained material features an unprecedented porous 8-connected bcu-net that accommodates nanoscale [α-SiW O ] counterions, displaying uncommon optoelectronic responses. Besides, the fabricated synaptic device based on this material can achieve dual-modulation of synaptic plasticity due to the synergetic effect of electron reservoir POM and photoinduced electron transfer. And it can successfully simulate learning and memory processes similar to those in biological systems. The result provides a facile and effective strategy to customize multi-modality artificial synapses in the field of crystal engineering, which opens a new direction for developing high-performance neuromorphic devices.
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http://dx.doi.org/10.1002/smll.202302197 | DOI Listing |
Mater Horiz
December 2024
Walter Schottky Institute, Technical University of Munich, 85748 Garching, Germany.
Semiconducting ternary nitrides are a promising class of materials that have received increasing attention in recent years, but often show high free electron concentrations due to the low defect formation energies of nitrogen vacancies and substitutional oxygen, leading to degenerate n-type doping. To achieve non-degenerate behavior, we now investigate a family of amorphous calcium-zinc nitride (Ca-Zn-N) thin films. By adjusting the metal cation ratios, we demonstrate band gap tunability between 1.
View Article and Find Full Text PDFMolecules
November 2024
College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.
Metal ion intercalation into van der Waals gaps of layered materials is vital for large-scale electrochemical energy storage. Transition-metal sulfides, ABS (where A and B represent Zr, Hf, and Ti as monolayers as anodes), are examined as lithium and sodium ion storage. Our study reveals that these monolayers offer exceptional performance for ion storage.
View Article and Find Full Text PDFJ Phys Chem Lett
November 2024
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China.
Adv Mater
October 2024
Department of Chemistry, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China.
Dalton Trans
September 2024
Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India.
Heavier metal-based tellurides with complex structures are of great interest for thermoelectric () applications. Herein, we report the synthesis of a new telluride BaZrTe using high-temperature reactions of elements. Our single-crystal X-ray diffraction study reveals that it crystallizes in the space group 3̄ of the trigonal crystal system and is isostructural to its Se analogue BaZrSe complex.
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