AI Article Synopsis
- Current interconnect insulators like silicon dioxide have high dielectric constants (≈4), leading to issues like parasitic capacitance and slower response times in integrated circuits.
- Researchers developed a novel thin film of amorphous carbon nitride (a-CN) using a specific process involving MXene-Ti CNT and bromine vapor, which resulted in an ultra-low dielectric constant of 1.69 at 100 kHz.
- The a-CN film also demonstrates a high breakdown strength of 5.6 MV/cm, indicating significant potential for use in future integrated circuit technology.
Article Abstract
Low-dielectric-constant materials such as silicon dioxide serving as interconnect insulators in current integrated circuit face a great challenge due to their relatively high dielectric constant of ≈4, twice that of the recommended value by the International Roadmap for Devices and Systems, causing severe parasitic capacitance and associated response delay. Here, novel atomic layers of amorphous carbon nitride (a-CN) are prepared via a topological conversion of MXene-Ti CNT under bromine vapor. Remarkably, the assembled a-CN film exhibits an ultralow dielectric constant of 1.69 at 100 kHz, much lower than the previously reported dielectric materials such as amorphous carbon (2.2) and fluorinated-doped SiO (3.6), ascribed to the low density of 0.55 g cm and high sp C level of 35.7%. Moreover, the a-CN film has a breakdown strength of 5.6 MV cm , showing great potential in integrated circuit application.
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| http://dx.doi.org/10.1002/adma.202301399 | DOI Listing |
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