This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO is used to form the dielectric and passivation layers. The TiO film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303008 | PMC |
| http://dx.doi.org/10.3390/mi14061183 | DOI Listing |
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