A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388 | PMC |
| http://dx.doi.org/10.3390/ma16124265 | DOI Listing |
Publication Analysis
Top Keywords
structures grown
8
miscut si111
8
si111 wafers
8
algan hemt
4
hemt structures
4
miscut
4
grown miscut
4
wafers complex
4
complex study
4
study performed
4
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!