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Group-III nitride heteroepitaxial films approaching bulk-class quality. | LitMetric

Group-III nitride heteroepitaxial films approaching bulk-class quality.

Nat Mater

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China.

Published: July 2023

AI Article Synopsis

  • III-nitride wide bandgap semiconductors are key materials for advanced electronics, and improvements in their quality have been significant but still lag behind bulk crystals.
  • A novel method has been developed to enhance the quality of these heteroepitaxial films, utilizing nano-patterned templates to control the growth and alignment of AlN columns.
  • This approach drastically reduces dislocation density to levels comparable to bulk AlN crystals, paving the way for producing high-quality films in a more cost-effective and scalable manner.

Article Abstract

III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics and electronics. Their application has progressed greatly thanks to the continuous quality improvements of heteroepitaxial films grown on large-lattice-mismatched foreign substrates. But compared with bulk single crystals, there is still tremendous room for the further improvement of the material quality. Here we show a paradigm to achieve high-quality III-nitride heteroepitaxial films by the controllable discretization and coalescence of columns. By adopting nano-patterned AlN/sapphire templates with regular hexagonal holes, discrete AlN columns coalesce with uniform out-of-plane and in-plane orientations guaranteed by sapphire nitridation pretreatment and the ordered lateral growth of cleavage facets, which efficiently suppresses the regeneration of threading dislocations during coalescence. The density of dislocation etch pits in the AlN heteroepitaxial film reaches 3.3 × 10 cm, close to the present available AlN bulk single crystals. This study facilitates the growth of bulk-class quality III-nitride films featuring low cost and scalability.

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Source
http://dx.doi.org/10.1038/s41563-023-01573-6DOI Listing

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