All-solution-processed perovskite light-emitting diodes (LEDs) have the potential to be inexpensive and easily manufactured on a large scale without requiring vacuum thermal deposition of the emissive and charge transport layers. Zinc oxide (ZnO), which possesses superior optical and electronic properties, is commonly used in all-solution-processed optoelectronic devices. However, the polar solvent of ZnO inks can corrode the perovskite layer and cause severe photoluminescence quenching. In this work, we report the successful dispersion of ZnO nanoparticles in nonpolar -octane by controlling the surface ligands from acetates to thiols. The nonpolar ink prevents the destruction of perovskite films. In addition, thiol ligands upshift the conduction band energy level, which also helps inhibit exciton quenching. Consequently, we demonstrate the fabrication of high-performance all-solution-processed green perovskite LEDs with a brightness of 21 000 cd/m and an external quantum efficiency of 6.36%. Our work provides a ZnO ink for fabricating efficient all-solution-processed perovskite LEDs.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acs.jpclett.3c01428 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
All-Solution-Processed High-Performance MoS Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric.
ACS Nano
January 2024
Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Article Synopsis
- Assembling van der Waals materials into thin films for electronics shows potential, especially at low temperatures, but previous attempts failed due to a lack of suitable dielectric materials and high-temperature processes.
- The study introduces all-solution-processed thin-film transistors (TFTs) using molybdenum disulfide (MoS) as the channel and Dion-Jacobson perovskite oxides as the dielectric, with fabrication done below 250 °C.
- The resulting MoS TFTs demonstrate impressive performance with high mobility, a significant on/off ratio, and allow for low-voltage operation and reduced power consumption, highlighting a scalable method for advanced electronics.
Toward Chiral Lasing from All-Solution-Processed Flexible Perovskite-Nanocrystal-Liquid-Crystal Membranes.
Adv Mater
November 2023
SCNU-TUE Joint Lab of Device Integrated Responsive Materials (DIRM), National Center for International Research on Green Optoelectronics, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
Circularly polarized (CP) coherent light sources are of great potential for various advanced optical applications spanning displays/imaging to data processing/encryption and quantum communication. Here, the first demonstration of CP amplified spontaneous emission (ASE)/lasing from a free-standing and flexible membrane device is reported. The membrane device consists of perovskite nanocrystals (PNCs) and cholesteric liquid crystals (CLCs) layers sandwiched within a Fabry-Pérot (F-P) cavity architecture.
View Article and Find Full Text PDFAll-Solution-Processed Perovskite Light-Emitting Diodes Based on a Thiol-Modified ZnO Electron-Transporting Layer.
J Phys Chem Lett
June 2023
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, China.
All-solution-processed perovskite light-emitting diodes (LEDs) have the potential to be inexpensive and easily manufactured on a large scale without requiring vacuum thermal deposition of the emissive and charge transport layers. Zinc oxide (ZnO), which possesses superior optical and electronic properties, is commonly used in all-solution-processed optoelectronic devices. However, the polar solvent of ZnO inks can corrode the perovskite layer and cause severe photoluminescence quenching.
View Article and Find Full Text PDFAll-solution-processed perovskite/gallium nitride particles hybrid visible-blind ultraviolet photodetectors.
Nanotechnology
May 2023
School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, People's Republic of China.
Last decades have witnessed the rapid development of ultraviolet (UV) photodetectors in diversity of applications. The III-nitride semiconductor and metal halide perovskite have both performed promising UV-sensing optoelectronic properties. However, they are still suffering from either the high temperature epitaxial-growth or low photocurrent generated in UV range.
View Article and Find Full Text PDFDetector-grade perovskite single-crystal wafers via stress-free gel-confined solution growth targeting high-resolution ionizing radiation detection.
Light Sci Appl
April 2023
State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China.
Solution-processed organic‒inorganic halide perovskite (OIHP) single crystals (SCs) have demonstrated great potential in ionizing radiation detection due to their outstanding charge transport properties and low-cost preparation. However, the energy resolution (ER) and stability of OIHP detectors still lag far behind those of melt-grown inorganic perovskite and commercial CdZnTe counterparts due to the absence of detector-grade high-quality OIHP SCs. Here, we reveal that the crystallinity and uniformity of OIHP SCs are drastically improved by relieving interfacial stress with a facial gel-confined solution growth strategy, thus enabling the direct preparation of large-area detector-grade SC wafers up to 4 cm with drastically suppressed electronic and ionic defects.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!