Tin-lead (Sn-Pb) perovskite solar cells (PSCs) with near-ideal bandgap still lag behind the pure lead PSCs. Disordered heterojunctions caused by inhomogeneous Sn/Pb ratio in the binary perovskite film induce large recombination loss. Here, an Sn-Pb perovskite film is reported with homogeneous component and energy distribution by introducing hydrazine sulfate (HS) in Sn perovskite precursor. HS can form hydrogen bond network and coordinate with FASnI thus no longer bond with Pb , which reduces the crystallization rate of tin perovskite to the level of lead analog. The strong bonding between SO and Sn can also suppress its oxidation. As a result, the Sn-Pb PSCs with HS exhibit a significantly improved V of 0.91 V along with a high efficiency of 23.17%. Meanwhile, the hydrogen bond interaction network, strong bonding between Sn and sulfate ion also improve the thermal, storage, and air stability of resulting devices.
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http://dx.doi.org/10.1002/adma.202303674 | DOI Listing |
Sci Bull (Beijing)
December 2024
Key Lab for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Nanoscience and Materials Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China. Electronic address:
Mixed Sn-Pb perovskites are attracting significant attention due to their narrow bandgap and consequent potential for all-perovskite tandem solar cells. However, the conventional hole transport materials can lead to band misalignment or induce degradation at the buried interface of perovskite. Here we designed a self-assembled material 4-(9H-carbozol-9-yl)phenylboronic acid (4PBA) for the surface modification of the substrate as the hole-selective contact.
View Article and Find Full Text PDFChem Asian J
December 2024
Ningbo University, Department of Microelectronic Science and Engineering, Fenghua road 818, 315211, Ningbo, CHINA.
Mixed Tin-Lead perovskite solar cells (Sn-Pb PSCs) with a narrow band gap (NBG) are significant for single-junction and all-perovskite tandem solar cells due to their low toxicity and ideal band gap. Nevertheless, the performance and stability of the device are adversely affected by the uncontrollable crystallization and ion migration processes. Acetic acid (HAc) is introduced into the perovskite precursor solution as a multifunctional additive to enhance the film crystallization process and restrain ion migration in the device.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
School of Materials Science and Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea.
Narrow-bandgap (NBG) Sn-Pb mixed perovskite solar cells (PSCs) represent a promising solution for surpassing the radiative efficiency of single-junction solar cells. The unique bandgap tunability of halide perovskites enables optimal tandem configurations of wide-bandgap (WBG) and NBG subcells. However, these devices are limited by the susceptibility of Sn in the NBG bottom cell to being oxidized to Sn, creating detrimental Sn vacancies.
View Article and Find Full Text PDFNanoscale
December 2024
Department of Physics, Faculty of Science, Srinakharinwirot University, Bangkok 10110, Thailand.
An all-perovskite tandem cell based on narrow-bandgap mixed tin-lead (Sn-Pb) alloyed perovskites is a potential photovoltaic device whose power conversion efficiency can exceed the Shockley-Queisser limit of a single-junction solar cell, 33%. However, comprehensive descriptions of the charge-carrier mobilities and transport mechanisms in the mixed Sn-Pb perovskite system remain elusive. Herein, we integrate density functional theory (DFT) calculations with charge transport models to provide more insight into the electronic structures and transport behaviors of these materials.
View Article and Find Full Text PDFAdv Mater
November 2024
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
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