AI Article Synopsis
- Amorphous semiconductors, like Fe-Sn films, are useful in electronics and energy devices due to their ease of production and high performance.
- This study shows that even without long-range order, the short-range order of kagome-lattice structures in these amorphous films contributes significantly to their unique electrical and magneto-thermoelectric properties.
- The findings suggest that understanding the Berry curvature in amorphous materials can pave the way for new topological electronic devices, enhancing their functionality.
Article Abstract
Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe-Sn amorphous films. The Fe-Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals FeSn and FeSn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10264439 | PMC |
| http://dx.doi.org/10.1038/s41467-023-39112-1 | DOI Listing |
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