Enhanced radiative efficiency, long carrier lifetimes, and high carrier mobilities are hallmarks of perovskite solar cells. Considering this, complete cells experience large nonradiative recombination losses that restrict their considerably below the Shockley-Queisser limit. Auger recombination, which involves two free photo-induced carriers and a trapped charge carrier, is one potential mechanism. Herein, the effects of Auger capture coefficients in mixed-cation perovskites are analyzed employing SCAPS-1D computations. It is demonstrated that and FF are severely decreased with an increase in the acceptor concentration and Auger capture coefficients of perovskites, thus reducing the device performance. When the Auger capture coefficient is increased to 10 cm s under the acceptor concentration of 10 cm, the performance is drastically lowered from 21.5% (without taking Auger recombination into account) to 9.9%. The findings suggest that in order to increase the efficiency of perovskite solar cells and prevent the effects of Auger recombination, the Auger recombination coefficients should be less than 10 cm s.

Download full-text PDF

Source
http://dx.doi.org/10.1039/d3cp00441dDOI Listing

Publication Analysis

Top Keywords

auger recombination
20
perovskite solar
12
solar cells
12
auger capture
12
effects auger
8
capture coefficients
8
acceptor concentration
8
auger
7
recombination
6
understanding auger
4

Similar Publications

Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers. However, their efficiency is significantly limited by non-radiative Auger recombination, a process that increases lasing thresholds and diminishes device longevity through excessive heat generation. Recent advancements indicate that these limitations can be mitigated by employing spherical quantum wells, or quantum shells (QSs), in place of conventional QDs.

View Article and Find Full Text PDF

We demonstrate the use of [2-(9-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di--butyl-9-carbazol-9-yl)ethyl]phosphonic acid (-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, the QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over seven-fold increase in brightness, achieving a brightness of 373,000 cd m, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ∼1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >10 cd m.

View Article and Find Full Text PDF

The simulation of ideal and non-ideal conditions using the SCAPS-1D simulator for novel structure Ag/FTO/CuBiO/GQD/Au was done for the first time. The recombination of charge carriers in CuBiO is an inherent problem due to very low hole mobility and polaron transport in the valence band. The in-depth analysis of the simulation result revealed that Graphene Quantum Dots (GQDs) can act as an appropriate hole transport layer (HTL) and can enhance hole transportation.

View Article and Find Full Text PDF

Virtual Frisch grid perovskite CsPbBr semiconductor with 2.2-centimeter thickness for high energy resolution gamma-ray spectrometer.

Nat Commun

January 2025

State Key Laboratory of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, and School for Radiological and Interdisciplinary Sciences (RAD-X), Soochow University, Suzhou, China.

High intrinsic detection efficiency is as decisive as high energy resolution. Scaling up detector volume has presented great challenges, preventing perovskite semiconductors from reaching sufficient detection efficiency. We report a hole-only virtual-Frisch-grid CsPbBr detector up to 2.

View Article and Find Full Text PDF

Free Carrier Auger-Meitner Recombination in Monolayer Transition Metal Dichalcogenides.

Nano Lett

January 2025

Wyant College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, United States.

Microscopic many-body models based on inputs from first-principles density functional theory are used to calculate the carrier losses due to free carrier Auger-Meitner recombination (AMR) processes in Mo- and W-based monolayer transition metal dichalcogenides as a function of the carrier density, temperature, and dielectric environment. Despite the exceptional strength of Coulomb interaction in the two-dimensional materials, the AMR losses are found to be similar in magnitude to those in conventional III-V-based quantum wells for the same wavelengths. Unlike the case in III-V materials, the losses show nontrivial density dependencies due to the fact that bandgap renormalizations on the order of hundreds of millielectronvolts can bring higher bands into or out of resonance with the optimal energy level for the AMR transition, approximately one bandgap from the lowest band.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!