This paper presents a BJT-based smart CMOS temperature sensor. The analog front-end circuit contains a bias circuit and a bipolar core; the data conversion interface features an incremental delta-sigma analog-to-digital converter. The circuit utilizes the chopping, correlated double sampling, and dynamic element matching techniques to mitigate the effects of process bias and nonideal device characteristics on measurement accuracy. Furthermore, based on the principle of charge conservation, the dynamic range utilization of the ADC increases. We propose a neural network that uses a multilayer convolutional perceptron to calibrate the sensor output results. Using the algorithm, the sensor achieves an inaccuracy of ±0.11 °C (3σ), exceeding the accuracy of ±0.23 °C (3σ) achieved without calibration. We implement the sensor in a 0.18 µm CMOS process, occupying an area of 0.42 mm. It achieves a resolution of 0.01 °C and has a conversion time of 24 ms.
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http://dx.doi.org/10.3390/s23115132 | DOI Listing |
Sensors (Basel)
January 2025
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Single-Photon Avalanche Photodiodes (SPADs) are increasingly utilized in high-temperature-operated, high-performance Light Detection and Ranging (LiDAR) systems as well as in ultra-low-temperature-operated quantum science applications due to their high photon sensitivity and timing resolution. Consequently, the jitter value of SPADs at different temperatures plays a crucial role in LiDAR systems and Quantum Key Distribution (QKD) applications. However, limited studies have been conducted on this topic.
View Article and Find Full Text PDFRSC Adv
January 2025
Department of Solid State Physics and Nonlinear Physics, Faculty of Physics and Technology, AL-Farabi Kazakh National University Almaty 050040 Kazakhstan.
In this paper, Gd-doped ZrO gate dielectric films and metal-oxide-semiconductor (MOS) capacitors structured as Al/ZrGdO /Si were prepared using an ultraviolet ozone (UVO)-assisted sol-gel method. The effects of heat treatment temperature on the microstructure, chemical bonding state, optical properties, surface morphology and electrical characteristics of the ZrGdO composite films and MOS capacitors were systematically investigated. The crystalline phase of the ZrGdO films appeared only at 600 °C, indicating that Gd doping effectively inhibits the crystallization of ZrO films.
View Article and Find Full Text PDFPLoS One
January 2025
Computer Engineering, CCSIT, King Faisal University, Al Hufuf, Kingdom of Saudi Arabia.
This paper presents a low-power, second-order composite source-follower-based filter architecture optimized for biomedical signal processing, particularly ECG and EEG applications. Source-follower-based filters are recommended in the literature for high-frequency applications due to their lower power consumption when compared to filters with alternative topologies. However, they are not suitable for biomedical applications requiring low cutoff frequencies as they are designed to operate in the saturation region.
View Article and Find Full Text PDFMicrosyst Nanoeng
January 2025
The School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
In this article, a CMOS-compatible Pirani vacuum gauge was proposed featuring enhanced sensitivity, lower detection limit, and high-temperature stability, achieved through the implementation of a surface micromachining method coupled with a temperature compensation strategy. To improve performance, a T-type device with a 1 µm gap was fabricated resulting in an average sensitivity of 1.10 V/lgPa, which was 2.
View Article and Find Full Text PDFMicrosyst Nanoeng
January 2025
State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China.
We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC. The model encompasses mechanical, thermal, and electrical domains to facilitate the co-design of a MEMS sensor and CMOS interface circuits on the EDA platform. The compensation strategy is implemented on-chip with a variable temperature difference heating circuit.
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