Photoluminescence characteristics of novel Sm ions-doped La Al O phosphor for n-UV w-LED.

The combustion procedure was used to synthesize La Al O :Sm phosphors. The X-ray diffraction (XRD) patterns and morphological and photoluminescence properties were investigated. The XRD patterns consisted of a hexagonal crystal structure. At 405 nm, the maximum excitation intensity was obtained. Following 405 nm excitation, three different emission peaks at 573, 604, and 651 nm were seen. Concentration quenching occurred at 1.5 mol% Sm ions. The Commission Internationale de l'éclairage coordinates for the La Al O phosphor with Sm doping were 604 nm (x = 0.644, y = 0.355) falling in the red region. The findings implied that the prepared phosphor may be used to develop w-light-emitting diodes.