AI Article Synopsis
- vdW epitaxy allows the growth of epilayers with varied symmetries on graphene, enhancing its properties through anisotropic superlattices and strong interlayer interactions.
- The study specifically showcases in-plane anisotropy in graphene driven by molybdenum trioxide layers, achieving significant p-doping and maintaining high carrier mobility.
- The compressive strain from molybdenum trioxide thickness leads to electrical anisotropy in graphene, highlighted by a high conductance ratio and demonstrating a method to influence the symmetry of two-dimensional materials.
Article Abstract
van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing to formation of anisotropic superlattices and strong interlayer interactions. Here, we report in-plane anisotropy in graphene by vdW epitaxially grown molybdenum trioxide layers with an elongated superlattice. The grown molybdenum trioxide layers led to high p-doping of the underlying graphene up to = 1.94 × 10 cm regardless of the thickness of molybdenum trioxide, maintaining a high carrier mobility of 8155 cm V s. Molybdenum trioxide-induced compressive strain in graphene increased up to -0.6% with increasing molybdenum trioxide thickness. The asymmetrical band distortion of molybdenum trioxide-deposited graphene at the Fermi level led to in-plane electrical anisotropy with a high conductance ratio of 1.43 owing to the strong interlayer interaction of molybdenum trioxide-graphene. Our study presents a symmetry engineering method to induce anisotropy in symmetric two-dimensional (2D) materials via the formation of asymmetric superlattices with epitaxially grown 2D layers.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10246909 | PMC |
| http://dx.doi.org/10.1126/sciadv.adg6696 | DOI Listing |
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