Semiconductor-based gas sensors hold great promise for effective carbon monoxide (CO) detection. However, boosting sensor response and selectivity remains a key priority in moist conditions. In this study, a composite material, Pt quantum dots decorated MoS nanosheets (MoS /Pt), is developed as a highly sensitive material for CO detection when facilitated with visible light. The MoS /Pt sensor shows a significantly improved response (87.4%) with impressive response/recovery kinetics (20 s/17 s), long-term stability (60 days), and good selectivity to CO at high humidity (≈60%). It is confirmed both experimentally and theoretically that the MoS /Pt surface lowers the activation energy to convert CO to CO via the free radicals induced by the synergy of photochemical effects and water vapor. As a result, the MoS /Pt surface promotes both CO response and selectivity, providing fundamental clues to improve room-temperature semiconductor-based sensors for gas detection under extreme conditions.
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http://dx.doi.org/10.1002/adma.202303523 | DOI Listing |
ACS Nano
January 2025
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS), have emerged as a generation of nonprecious catalysts for the hydrogen evolution reaction (HER), largely due to their theoretical hydrogen adsorption energy close to that of platinum. However, efforts to activate the basal planes of TMDs have primarily centered around strategies such as introducing numerous atomic vacancies, creating vacancy-heteroatom complexes, or applying significant strain, especially for acidic media. These approaches, while potentially effective, present substantial challenges in practical large-scale deployment.
View Article and Find Full Text PDFJ Pain Symptom Manage
January 2025
Faculty of Medicine, University of Lisbon, Lisboa, Portugal; Bento Menni Palliative Care Unit, Sintra, Portugal. Electronic address:
Introduction: Palliative care (PALC) is traditionally linked to end-of-life cancer care but also benefits advanced non-oncological diseases.
Objectives: This systematic review evaluated the impact of early PALC on quality of life (QOL), symptom management, advance care planning (ACP), and healthcare resource utilization (HRU) among non-oncological patients.
Methods: PubMed, Web of Science, and Scopus databases were searched for randomized controlled trials and clinical studies published between January 2018 and April 2023.
ACS Nano
January 2025
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
In atomically thin two-dimensional (2D) materials, grain boundaries (GBs) are ubiquitous, displaying a profound effect on the electronic structure of the host lattice. The random configuration of atoms within GBs introduces an arbitrary and unpredictable local electronic environment, which may hazard electron transport. Herein, by utilizing the Pt single-atom chains with an ultimate one-dimensional (1D) feature (width of a single atom and length up to tens of nanometers), we realized the suture of the electron pathway at GBs of diversified transition metal dichalcogenides (TMDCs).
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Atomic layer deposition (ALD) of high-k dielectric films on MoS channels can lead to inadvertent remote electron doping of channels owing to nonequilibrium ALD conditions, such as the low temperatures and short purge times required for pinhole-free coating, as well as the weak physical adsorption of ALD precursors on MoS. In this study, we propose the application of a simple and effective HO vapor post-treatment (HO PT) at 100 °C immediately after complete integration of bottom- and top-gate monolayer MoS field-effect transistors (FETs), to address the inadvertent channel doping effect. When HO PT was applied to bottom-gate monolayer MoS FETs with an ALD-AlO passivation layer, the mitigation of channel doping was confirmed through electrical and optical measurements.
View Article and Find Full Text PDFACS Omega
December 2024
Electrical Engineering, Indian Institute of Technology Gandhinagar, Gandhinagar 382055, India.
This work presents a density functional theory (DFT) study of substitutional and adsorption-based halogen (I or F) doping of WS-based transistors to enhance their contact properties. Substitutional doping of the WS monolayer with halogens results in -type behavior, while halogen adsorption on the surface of the WS monolayer induces -type behavior. This is attributed to differing directions of charge flow, as supported by the Mulliken analysis.
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