AI Article Synopsis
- Wide bandgap semiconductors like gallium oxide (GaO) are poised to revolutionize high-power electronics, but challenges persist in fabricating effective p-n diodes.
- This study explores optimizing vertical diodes by adjusting substrate orientation, selecting different 2D materials, and using specific metal contacts, focusing on β-GaO.
- Results indicate that using a specific substrate orientation (-201), along with WS 2D layers and Ti contacts, leads to record rectification ratios and high ON-current densities, enhancing their potential for power rectifiers.
Article Abstract
Wide bandgap semiconductors such as gallium oxide (GaO) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal GaO substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p-n diodes from GaO has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-GaO by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. The quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-GaO vertical heterojunctions are optimized by substrate planar orientation (-201), combined with 2D WS exfoliated layers and Ti contacts, and show record rectification ratios (>10) concurrently with ON-Current density (>10 A cm) for application in power rectifiers.
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| http://dx.doi.org/10.1039/d3nr01987j | DOI Listing |
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