The development of stable materials, processable on a large area, is a prerequisite for perovskite industrialization. Beyond the perovskite absorber itself, this should also guide the development of all other layers in the solar cell. In this regard, the use of NiO as a hole transport material (HTM) offers several advantages, as it can be deposited with high throughput on large areas and on flat or textured surfaces via sputtering, a well-established industrial method. However, NiO may trigger the degradation of perovskite solar cells (PSCs) when exposed to environmental stressors. Already after 100 h of damp heat stressing, a strong fill factor (FF) loss appears in conjunction with a characteristic S-shaped curve. By performing a wide range of analysis on cells and materials, completed by device simulation, the cause of the degradation is pinpointed and mitigation strategies are proposed. When NiO is heated in an air-tight environment, its free charge carrier density drops, resulting in a band misalignment at the NiO/perovskite interface and in the formation of a barrier impeding hole extraction. Adding an organic layer between the NiO and the perovskite enables higher performances but not long-term thermal stability, for which reducing the NiO thickness is necessary.

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http://dx.doi.org/10.1021/acsami.3c02709DOI Listing

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