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Near-infrared (NIR) emitting phosphors are currently receiving considerable attention owing to their high demand in various applications, such as light detection and ranging (LiDAR), short-range communications, security, biosensing and night vision lighting applications. The miniaturization of photonic components demands the integration of thin films into exploitable devices. In this context, NIR emitting ZnAlO:Ce/Nd films of hundreds of nanometer thickness are synthesized using a scalable and cost-efficient approach to screen printing. Cerium co-doping is responsible for the Nd emission in the NIR through energy transfer by exciting the films under UV excitation at around 360 nm. Through the proper design of ink, dense Nd/Ce doped ZnAlO ceramic films were produced using polycrystalline alumina. The use of polycrystalline alumina substrates opens up new opportunities because this ceramic is a cheap and well-known substrate for optoelectronic packaging. During manufacturing, as a direct effect of predominant crystal growth over the polycrystalline alumina substrate, an increase in emission intensity is achieved. The results obtained by X-ray photoelectron (XPS) and X-ray absorption near edge spectroscopy (XANES) serve to determine the oxidation state of Ce. The findings of this study indicate that a higher concentration of Ce promotes NIR emission. This study may contribute to a better understanding of film production processes of films based on the ZnAlO matrix and guide future studies on films for NIR emitters.
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