The enhanced piezoelectric properties of aluminum scandium nitride (AlScN or AlScN) were discovered in 2009 by Morito Akiyama's team [...].
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| http://dx.doi.org/10.3390/mi14051067 | DOI Listing |
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Periodically poled aluminum scandium nitride bulk acoustic wave resonators and filters for communications in the 6G era.
Microsyst Nanoeng
January 2025
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling ( ) to form filters with low insertion loss and high selectivity. However, both the Q and of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz.
View Article and Find Full Text PDFScandium-III-nitrides: A New Material Platform for Semiconductor Photocatalysts with High Reducing Power.
Nano Lett
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Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
Semiconductor nanowires have become emerging photocatalysts in artificial photosynthesis processes for solar fuel production. For reduction reactions, semiconductor photocatalysts with high reducing powers are highly desirable, especially for chemicals that are extremely difficult to reduce. This study introduces a new semiconductor photocatalyst, scandium (Sc)-III-nitrides, which have higher reducing powers than all conventional semiconductor photocatalysts.
View Article and Find Full Text PDFComposition-Graded Nitride Ferroelectrics Based Multi-Level Non-Volatile Memory for Neuromorphic Computing.
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State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
Multi-level non-volatile ferroelectric memories are emerging as promising candidates for data storage and neuromorphic computing applications, due to the enhancement of storage density and the reduction of energy and space consumption. Traditional multi-level operations are achieved by utilizing intermediary polarization states, which exhibit an unpredictable ferroelectric domain switching nature, leading to unstable multi-level memory. In this study, a unique approach of composition-graded ferroelectric ScAlN to achieve tunable operating voltage in a wide range and attain precise control of domain switching and stable multi-level memory is proposed.
View Article and Find Full Text PDFScAlN PMUTs Based on Flexurally Suspended Membrane for Long-Range Detection.
Micromachines (Basel)
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Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
Piezoelectric micromachined ultrasonic transducers (PMUTs) have been widely applied in distance sensing applications. However, the rapid movement of miniature robots in complex environments necessitates higher ranging capabilities from sensors, making the enhancement of PMUT sensing distance critically important. In this paper, a scandium-doped aluminum nitride (ScAlN) PMUT based on a flexurally suspended membrane is proposed.
View Article and Find Full Text PDFFabrication of Ultrathin Ferroelectric AlScN Films under Complementary-Metal-Oxide-Semiconductor Compatible Conditions by using HfN Electrode.
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Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.
Article Synopsis
- - Aluminum scandium nitride (AlScN) shows great potential for future ferroelectric memories due to its high remanent charge density, but it requires thinner films to reduce the high coercive field for lower operating voltages.
- - Thinner films encounter issues with significant leakage currents, which complicate their compatibility with existing CMOS fabrication methods.
- - This study introduces a HfN bottom electrode that minimizes lattice mismatch and reduces leakage currents, allowing for a CMOS-compatible HfN/ASN/TiN structure that showcases ferroelectric properties even at thicknesses of 3 nm and decreases the coercive voltage to 4.35 V.
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