This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157-166 GHz frequency band. The -3 dB gain bandwidth corresponded to 157-166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the -3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222545 | PMC |
| http://dx.doi.org/10.3390/mi14050993 | DOI Listing |
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