AI Article Synopsis
- LED die size reduction causes decreased light output efficiency in micro-LED displays, which is a significant challenge.
- A new digital etching technology utilizing multi-step etching and treatments helps reduce sidewall defects and improves the electrical properties of the LEDs.
- The study shows a 92.6% increase in light output power for smaller LEDs using this method, with minimal impact on output power density compared to larger devices.
Article Abstract
The decrease of light output efficiency with the reduction of LED (light-emitting diode) die size is one of the challenges of micro-LED displays. Here we propose a digital etching technology that employs multi-step etching and treatment to mitigate sidewall defects exposed after mesa dry etching. In this study, by two-step etching and N treatment, the electrical properties of the diodes show an increase of forward current and a decrease in reverse leakage due to suppressed sidewall defects. An increase of light output power by 92.6% is observed for 10 × 10-µm mesa size with digital etching, as compared with that with only one step etching and no treatment. We also demonstrated only 1.1% decrease in output power density for a 10 × 10-µm LED as compared with a 100 × 100-µm device without performing digital etching.
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| http://dx.doi.org/10.1364/OL.476967 | DOI Listing |
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