The application of microwave diamond-based HBAR as a sensor of microwave acoustic attenuation α was considered, using the Mo film as an object of research. A multilayered piezoelectric structure, as the Al/AlScN/Mo/(100) diamond/Mo, was produced using aluminum-scandium nitride composition, and was studied in detail for a number of the Mo films with different thicknesses obtained by magnetron deposition. The operational frequency band of 3.3 … 18 GHz was used. It was found that the dependence of the resonant frequency shift vs. the (Mo) thickness for all the overtones to be investigated was linear. For a given sensor, it was found that the mass sensitivity per unit area was equal to -26 × 10 and -8.7 × 10 g/(cm∙Hz) at 6.0 GHz and 18.3 GHz, respectively. The frequency dependencies of quality factor , which changed as a result of Mo film deposition, were considered as the basic experimental data. A method for extracting the α(Mo) values was proposed. The -factor under the complete deposition of Mo film was 936 nm, and dropped moderately to ~25%. Such values were enough for an aim of the given experiment. The α() in molybdenum was obtained, and demonstrated a dependence that was close to quadratic, corresponding to the Akhiezer attenuation law.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10181758 | PMC |
http://dx.doi.org/10.3390/s23094502 | DOI Listing |
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