Dissociation of N on a Si(111)-7x7 Surface at Room Temperature.

We demonstrate that the strong N bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N that significantly weaken the N bond. This activated N triple bond dissociation on the surface leads to the formation of a Si N interface.