Depositing ALD-oxides on MLD-metalcones: enhancing initial growth through O plasma densification.

Flexible devices are experiencing a steady increase in popularity, which brings the need of suitable protective/functional coatings for these applications. On the one hand, Atomic Layer Deposition (ALD) produces thin films with great purity, few pinholes and good conformality, but flexibility is rather limited. On the other hand, Molecular Layer Deposition (MLD) can produce partially/fully organic coatings with good flexibility, but stability concerns limit their applications. Therefore, combining ALD and MLD to obtain materials with good flexibility and improved characteristics holds great potential. In this article, we utilised O plasma treatments on various metalcone films to improve the compatibility of sequential ALD/MLD depositions. During plasma modification, spectroscopic ellipsometry measurements ( SE) suggested that mainly the near-surface region of the metalcone layer was affected by the plasma treatment, locally converting the metalcone into a metal-oxide structure. This structure shielded the underlying metalcone layer from the plasma, thus resulting in a saturative-type behaviour even during extended plasma exposures. X-Ray reflectivity measurements (XRR) could only be fitted with bilayer models, while Fourier-Transform InfraRed spectroscopy (FTIR) showed an absorption decrease in the C-O band and an increase in the CO region. Additionally, film air stability seemed improved by this treatment. ALD-oxides were grown on these plasma-treated metalcones (PT-metalcones), and results were compared to pristine ones. While ALD growth on pristine metalcones always suffered from a delay, after which linear growth was achieved, oxides on PT-metalcones exhibited linear growth immediately, from cycle one. We therefore conclude that, upon O plasma exposure, metalcones are densified into a metalcone/oxide bilayer, where the oxide shields the underlying film from further oxidation. And, if an ALD oxide coating is to be deposited on top of these structures, this plasma treatment will make the structure more suitable for post-processing. In applications that require the combination of ALD/MLD multistacks, the use of an intermittent plasma treatment can prove useful.