With the advances in the field of ultrafast photonics occurring so fast, the demand for optical modulation devices with high performance and soliton lasers which can realize the evolution of multiple soliton pulses is gradually increasing. Nevertheless, saturable absorbers (SAs) with appropriate parameters and pulsed fiber lasers which can output abundant mode-locking states still need to be further explored. Due to the special band gap energy values of few-layer indium selenide (InSe) nanosheets, we have prepared a SA based on InSe on a microfiber by optical deposition. In addition, we demonstrate that our prepared SA possesses a modulation depth and saturable absorption intensity about 6.87% and 15.83 MW/cm, respectively. Then, multiple soliton states are obtained by dispersion management techniques, including regular solitons, and second-order harmonic mode-locking solitons. Meanwhile, we have obtained multi-pulse bound state solitons. We also provide theoretical basis for the existence of these solitons. The results of the experiment show that the InSe has the potential to be an excellent optical modulator because of its excellent saturable absorption properties. This work also is important for improving the understanding and knowledge of InSe and the output performance of fiber lasers.
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http://dx.doi.org/10.1364/OE.484219 | DOI Listing |
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January 2025
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China.
The properties and device applications of 2D semiconductors are highly sensitive to intrinsic structural defects due to their ultrathin nature. CuInSe (CIS) materials own excellent optoelectronic properties and ordered copper vacancies, making them widely applicable in photovoltaic and photodetection fields. However, the synthesis of 2D CIS nanoflakes remains challenging due to the nonlayered structure, multielement composition, and the competitive growth of various by-products, which further hinders the exploration of vacancy-related optoelectronic devices.
View Article and Find Full Text PDFNat Mater
January 2025
Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
Chirality, a basic property of symmetry breaking, is crucial for fields such as biology and physics. Recent advances in the study of chiral systems have stimulated interest in the discovery of symmetry-breaking states that enable exotic phenomena such as spontaneous gyrotropic order and superconductivity. Here we examine the interaction between light chirality and electron spins in indium selenide and study the effect of magnetic field on emerging tunnelling photocurrents at the Van Hove singularity.
View Article and Find Full Text PDFSci Rep
January 2025
Imec, imo-imomec, Thor Park 8320, 3600, Genk, Belgium.
This study presents a comprehensive evaluation of Copper Indium Gallium Selenide (CIGS) solar technology, benchmarked against crystalline silicon (c-Si) PERC PV technology. Utilizing a newly developed energy yield model, we analyzed the performance of CIGS in various environmental scenarios, emphasizing its behavior in low-light conditions and under different temperature regimes. The model demonstrated high accuracy with improved error metrics of normalized mean bias error (nMBE) ~ 1% and normalized root mean square error (nRMSE) of ~ 8%-20% in simulating rack mounted setup and integrated PV systems.
View Article and Find Full Text PDFNano Lett
December 2024
School of Electrical Engineering, Korea Advanced Institute of Science & Technology (KAIST), Daejeon 34141, Republic of Korea.
van der Waals (vdW) indium selenide (InSe) is receiving attention for its exceptional electron mobility and moderate band gap, enabling various applications. However, the intrinsic -type behavior of InSe has restricted its use predominantly to -type devices, constraining its application in complementary integrated microsystems. Here, we show superior ambipolar InSe transistors with vdW bottom contacts, achieving impressive -type on/off current ratios greater than 10 and Schottky barrier heights approaching the ideal Schottky-Mott limit.
View Article and Find Full Text PDFCryst Growth Des
November 2024
Department of Chemistry and Biochemistry, The City College of New York, New York, New York 10031, United States.
Indium selenide, InSe, has recently attracted growing interest due to its remarkable properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. InSe also provides the important advantage of tuning the electrical properties of ultrathin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, InSe has many different polymorphs, and it has been challenging to synthesize a single phase material, especially using scalable growth methods, as needed for technological applications.
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