Inserting self-assembled InAs quantum dots into quantum cascade lasers to achieve a broadband free-running frequency comb and effective radio-frequency injection.

We present what we belive to be a new band design in which self-assembled InAs quantum dots (QD) are embedded in InGaAs quantum wells (QW) to fabricate broadband single-core quantum dot cascade lasers (QDCLs) operating as frequency combs. The hybrid active region scheme was exploited to form upper hybrid QW/QD energy states and lower pure QD energy states, which expanded the total laser bandwidth by up to 55 cm due to a broad gain medium provided by the inherent spectral inhomogeneity of self-assembled QDs. The continuous-wave (CW) output power of these devices was as high as 470 mW with optical spectra centered at ∼7 µm, which allowed CW operation at temperatures up to 45 °C . Remarkably, measurement of the intermode beatnote map revealed a clear frequency comb regime extending over a continuous 200 mA current range. Moreover, the modes were self-stabilized with intermode beatnote linewidths of approximately 1.6 kHz. Furthermore, what we believe to be a novel π-shaped electrode design and coplanar waveguide transition way were used for RF signal injection. We found that RF injection modified the laser spectral bandwidth by up to 62 cm. The developing characteristics indicate the potential for comb operation based on QDCLs as well as the realization of ultrafast mid-infrared pulse.