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| http://dx.doi.org/10.1093/procel/pwac025 | DOI Listing |
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Direct observations of nucleation and early-stage growth of Au-catalyzed GaAs nanowires on Si(111).
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Centre for Analysis and Synthesis, NanoLund, Lund University, Box 124, Lund, 221 00, SWEDEN.
Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes.
View Article and Find Full Text PDFGluteus medius contracture: A case report and review of the literature.
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Rationale: Bilateral gluteus medius contractures in adults are rare in clinical practice, with only a few cases reported. These contractures may result from repeated intramuscular injections during childhood. Understanding the clinical manifestations, diagnostic process, treatment, and outcomes can provide insights into effective management strategies.
View Article and Find Full Text PDFCorrelative Raman-Voltage Microscopy Revealing the Localized Structure-Stress Relationship in Silicon Solar Cells.
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Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China.
Knowledge of localized strain at the micrometer scale is essential for tailoring the electrical and mechanical properties of ongoing thinning of crystal silicon (c-Si) solar cells. Thinning c-Si wafers below 110 m are susceptible to cracking in manufacturing due to the nonuniform stress distribution at a micrometer region, necessitating a rigorous technique to reveal the localized stress distribution correlating with its device electrical output. In this context, a Raman microscopy integrated with a photovoltage mapping setup with high resolution to the submicrometer scale is developed to acquire correlative Raman-voltage of the localized physical properties at the microcracks on the rear side of c-Si solar cells.
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Objective: Epilepsy is a common neurological disease affecting nearly 1% of the global population, and temporal lobe epilepsy (TLE) is the most common type. Patients experience recurrent seizures and chronic cognitive deficits that can impact their quality of life, ability to work, and independence. These cognitive deficits often extend beyond the temporal lobe and are not well understood.
View Article and Find Full Text PDFChalcogen Substitution-Modulated Molecule-Electrode Coupling in Single-Molecule Junctions.
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Key Laboratory of Surface & Interface Science of Polymer Materials of Zhejiang Province, School of Chemistry and Chemical Engineering, Zhejiang Sci-Tech University, 928 Second Street, Zhejiang, Hangzhou 310018, China.
Molecule-electrode interfaces play a pivotal role in defining the electron transport properties of molecular electronic devices. While extensive research has concentrated on optimizing molecule-electrode coupling (MEC) involving electrode materials and molecular anchoring groups, the role of the molecular backbone structure in modulating MEC is equally vital. Additionally, it is known that the incorporation of heteroatoms into the molecular backbone notably influences factors such as energy levels and conductive characteristics.
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