There has been much interest in tin selenide (SnSe) in the thermoelectric community since the discovery of the record zT in the material in 2014. Manufacturing techniques used to produce SnSe are largely energy-intensive (e.g., spark plasma sintering); however, recently, in previous work, SnSe has been shown to be produced via a low embodied energy printing technique, resulting in 3D samples with high zT values (up to 1.7). Due to the additive manufacturing technique, the manufacturing time required was substantial. In this work, 3D samples were printed using the inorganic binder sodium metasilicate and reusable molds. This facilitated a single-step printing process that substantially reduced the manufacturing time. The printed samples were thermally stable through multiple thermal cycles, and a peak zT of 0.751 at 823 K was observed with the optimum binder concentration. A proof-of-concept thermoelectric generator produced the highest power output of any reported printed Se-based TEG to date.
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http://dx.doi.org/10.1021/acsami.3c01209 | DOI Listing |
Adv Sci (Weinh)
December 2024
Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and optoelectronic engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Crystalline thermoelectric materials, especially SnSe crystals, have emerged as promising candidates for power generation and electronic cooling. In this study, significant enhancement in ZT is achieved through the combined effects of lattice distortions and band convergence in multiple electronic valence bands. Density functional theory (DFT) calculations demonstrate that cation vacancies together with Pb substitutional doping promote the band convergence and increase the density of states (DOS) near the Fermi surface of SnSe, leading to a notable increase in the Seebeck coefficient (S).
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
School of Science, and Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, China.
As semiconductor technology advances toward miniaturization and portability, thin films with excellent thermoelectric performance have garnered increasing attention, particularly for applications in self-powered devices and temperature-responsive sensors. The high Seebeck coefficient of SnSe thin films makes them promising for temperature sensing, but their poor electrical conductivity limits their potential as thermoelectric generators. In this work, high-quality -axis oriented SnSe thin films were deposited on quartz substrates by using magnetron sputtering.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
SnSe materials have attracted extensive attention in thermoelectrics due to their low thermal conductivity. Nevertheless, the thermoelectric properties of n-type polycrystalline SnSe are still low, and metallic Sn distributed in the SnSe materials would affect the repeatability of thermoelectric performance. Herein, the thermoelectric properties of n-type polycrystalline SnSe-based composites are highly enhanced by heterogeneous Cu doping.
View Article and Find Full Text PDFNanotechnology
December 2024
Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United States of America.
The optothermal Raman method is useful in determining the in-plane thermal conductivity of two-dimensional (2D) materials that are either suspended or supported on a substrate. We compare this method with the Stokes/anti-Stokes scattering thermometry method, which can play a role in both calibration of Raman peak positions as well as extraction of the local phonon temperature. This work demonstrates that the Stokes/anti-Stokes intensity ratio plays an important role in determining the in-plane thermal conductivity of 2D tin diselenide (SnSe) dry-transferred onto a polished copper (Cu) substrate.
View Article and Find Full Text PDFJ Phys Condens Matter
November 2024
School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, People's Republic of China.
Over the past few decades, semiconductor materials of the group IV-VI monochalcogenides have attracted considerable interest from researchers due to their rich structural characteristics and excellent physical properties. Among them, GeS, GeSe, SnS, and SnSe crystallize in an orthorhombic structure () at ambient conditions. It has been reported that GeS, SnS, and SnSe transform into a higher symmetry orthorhombic structure () at high pressure, while the phase transformation route of GeSe at high pressure remains controversial.
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