Free Electron Dynamics and Intrinsic Mobility in GaO Revealed by Transient Terahertz Conductivity.

Here, we investigate the photoconductivity of gallium oxide thin films at different temperatures using time-resolved terahertz spectroscopy. The photogenerated electrons in the conduction band show a monoexponential decay, implying a first-order electron depopulation mechanism. The electron lifetime increases with rising temperature, and this trend coincides with the temperature dependence of the electron mobility rather than diffusion coefficient, suggesting that electron-hole recombination is determined by directional electron drift instead of random diffusion. The electron mobilities extracted from the transient terahertz conductivity are substantially greater than the previously reported Hall mobilities over a wide temperature range, and this is probably because the electron drift in response to the terahertz field is immune from scattering with macroscopic defects. Thus, the mobilities measured here may represent the intrinsic limit of the electron mobility in gallium oxide crystals. Our finding suggests that the current Hall mobility in this wide bandgap semiconductor is still far below the limit, and the long-range electron transport can be further increased by improving the crystalline quality.