Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide.

Nature

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.

Published: May 2023

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Source
http://dx.doi.org/10.1038/s41586-023-06093-6DOI Listing

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