AI Article Synopsis
- Electrostatic gating with electrolytes is a method to control the properties of 2D materials like graphene, but the effects of different ion types, sizes, and concentrations on this process are not well understood.
- Understanding these interactions can help improve designs for electrolyte gates and supercapacitors.
- Using Raman microspectroscopy, it was found that while the ionic type and concentration change the initial doping level of graphene, they do not affect the rate of doping under high ionic strength; a significant portion of the applied voltage shifts the Fermi level in concentrated electrolytes.
Article Abstract
Electrostatic gating using electrolytes is a powerful approach for controlling the electronic properties of atomically thin two-dimensional materials such as graphene. However, the role of the ionic type, size, and concentration and the resulting gating efficiency is unclear due to the complex interplay of electrochemical processes and charge doping. Understanding these relationships facilitates the successful design of electrolyte gates and supercapacitors. To that end, we employ Raman microspectroscopy combined with electrostatic gating using various concentrated aqueous electrolytes. We show that while the ionic type and concentration alter the initial doping state of graphene, they have no measurable influence over the rate of the doping of graphene with applied voltage in the high ionic strength limit of 3-15 M. Crucially, unlike for conventional dielectric gates, a large proportion of the applied voltage contributes to the Fermi level shift of graphene in concentrated electrolytes. We provide a practical overview of the doping efficiency for different gating systems.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10184166 | PMC |
| http://dx.doi.org/10.1021/acs.jpclett.3c00814 | DOI Listing |
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