AI Article Synopsis
- Hybrid structures that combine ferromagnetic (FM) materials and semiconductors hold significant promise for advancements in spintronics technology.* -
- A new approach has been developed to investigate spin-dependent transport in a specific type of quantum well (QW) that utilizes GaMnAs and a thin GaAs barrier.* -
- The study employs a combination of spin electromotive force measurements and photoluminescence detection, which proves effective in analyzing these hybrid structures and can be applied to other emerging materials, including 2D van der Waals materials.*
Article Abstract
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in a GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few-nanometer-thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows the resolution of the dynamic FM proximity effect on a nanometer scale. The method can be generalized to various systems, including rapidly developing 2D van der Waals materials.
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| http://dx.doi.org/10.1021/acs.nanolett.3c00769 | DOI Listing |
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Article Synopsis
- Hybrid structures that combine ferromagnetic (FM) materials and semiconductors hold significant promise for advancements in spintronics technology.* -
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