High-quality BiSe thin films with topological insulating properties at room temperature have recently attracted much attention as one of the promising materials for realizing innovative electronic and optoelectronic devices. Here, we report the high crystallinity growth of BiSe thin films on a patterned sapphire substrate (PSS) by using a vapor-phase transport deposition with minimizing thermal dissociation of Se atoms vaporized in BiSe powder. This PSS not only reduces the large dislocation of heterogeneously grown BiSe on a sapphire substrate but also induces enhanced light absorption in the visible to near-infrared (IR) ranges compared to BiSe on planar sapphire substrates. Thus, the BiSe thin film laterally grown on the PSS reveals uniform surface properties and high crystallinity in the rhombohedral lattice phase with a full width at half maximum of 0.06° for the XRD (003) peak. Also, the photoresponse of the fabricated IR conversion device using BiSe/PSS heterostructure exhibits excellent performance and high reliability with no degradation after continuous switching. As a result, the device constructed with the BiSe/PSS exhibits one order of magnitude higher NIR induced-photocurrent and 1-2 orders of magnitude faster photo-switching than that with BiSe/AlO. Such an enhancement in the device performance of BiSe/PSS is confirmed by the increased absorption spectra in visible and NIR ranges and the improved light absorption distribution.
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