In the present study, the sputtered aluminum nitride (AlN) films were processed in a reactive pulsed DC magnetron system. We applied a total of 15 different design of experiments (DOEs) on DC pulsed parameters (reverse voltage, pulse frequency, and duty cycle) with Box-Behnken experimental method and response surface method (RSM) to establish a mathematical model by experimental data for interpreting the relationship between independent and response variables. For the characterization of AlN films on the crystal quality, microstructure, thickness, and surface roughness, X-ray diffraction (XRD), atomic force microscopy (AFM), and field emission-scanning electron microscopy (FE-SEM) were utilized. AlN films have different microstructures and surface roughness under different pulse parameters. In addition, in-situ optical emission spectroscopy (OES) was employed to monitor the plasma in real-time, and its data were analyzed by principal component analysis (PCA) for dimensionality reduction and data preprocessing. Through the CatBoost modeling and analysis, we predicted results from XRD in full width at half maximum (FWHM) and SEM in grain size. This investigation identified the optimal pulse parameters for producing high-quality AlN films as a reverse voltage of 50 V, a pulse frequency of 250 kHz, and a duty cycle of 80.6061%. Additionally, a predictive CatBoost model for obtaining film FWHM and grain size was successfully trained.
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http://dx.doi.org/10.3390/ma16083015 | DOI Listing |
Micromachines (Basel)
December 2024
School of Integrated Circuit, Southeast University, Nanjing 210096, China.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique.
View Article and Find Full Text PDFLangmuir
January 2025
Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Black aluminum is a material characterized by high surface porosity due to columnar growth and exhibits unique optical properties that make it attractive for applications such as light trapping, infrared detection, and passive thermal radiation cooling. In this study, we correlate the structural and optical properties of black aluminum by comparing it with conventional reflective aluminum layers. These layers of varying thicknesses were deposited on fused silica substrates, and their optical properties were analyzed.
View Article and Find Full Text PDFMicrosyst Nanoeng
December 2024
Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
This work presents air-coupled piezoelectric micromachined ultrasonic transducers (pMUTs) with high sound pressure level (SPL) under low-driving voltages by utilizing sputtered potassium sodium niobate KNaNbO (KNN) films. A prototype single KNN pMUT has been tested to show a resonant frequency at 106.3 kHz under 4 V with outstanding characteristics: (1) a large vibration amplitude of 3.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Boron (B)-substituted wurtzite AlN (AlBN) is a recently discovered wurtzite ferroelectric material that offers several advantages over ferroelectric HfZrO and PbZrTiO. Such benefits include a relatively low growth temperature as well as a thermally stable, and thickness-stable ferroelectric polarization; these factors are promising for the development of ferroelectric nonvolatile random-access memory (FeRAM) that are CMOS-compatible, scalable, and reliable for storing data in harsh environments. However, wurtzite ferroelectric materials may undergo exacerbated self-heating upon polarization switching relative to other ferroelectric materials; the larger energy loss is anticipated due to the higher coercive field and remanent polarization.
View Article and Find Full Text PDFMolecules
November 2024
Guangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Chemical Engineering, Hezhou University, Hezhou 542899, China.
AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films.
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