Hole spin qubits based on germanium (Ge) have strong tunable spin-orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency () of a hole spin qubit in a Ge hut wire (HW) double quantum dot (DQD) is electrically tuned through the detuning energy (ϵ) and middle gate voltage (). gradually decreases with increasing ϵ; on the contrary, is positively correlated with . We attribute our results to the change of electric field on SOI and the contribution of the excited state in quantum dots to . We further demonstrate an ultrafast exceeding 1.2 GHz, which indicates the strong SOI in our device. The discovery of an ultrafast and electrically tunable in a hole spin qubit has potential applications in semiconductor quantum computing.
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http://dx.doi.org/10.1021/acs.nanolett.3c00213 | DOI Listing |
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