The unique structure of two-dimensional (2D) Dirac crystals, with electronic bands linear in the proximity of the Brillouin-zone boundary and the Fermi energy, creates anomalous situations where small Fermi-energy perturbations critically affect the electron-related lattice properties of the system. The Fermi-surface nesting (FSN) conditions determining such effects via electron-phonon interaction require accurate estimates of the crystal's response function(χ)as a function of the phonon wavevectorfor any values of temperature, as well as realistic hypotheses on the nature of the phonons involved. Numerous analytical estimates ofχ(q)for 2D Dirac crystals beyond the Thomas-Fermi approximation have been so far carried out only in terms of dielectric response functionχ(q,ω), for photon and optical-phonon perturbations, due to relative ease of incorporating a-independent oscillation frequency(ω)in calculation. Models accounting for Dirac-electron interaction with acoustic phonons, for whichis linear toand is therefore dispersive, are essential to understand many critical crystal properties, including electrical and thermal transport. The lack of such models has often led to the assumption that the dielectric response functionχ(q)in these systems can be understood from free-electron behavior. Here, we show that, different from free-electron systems,χ(q)calculated for acoustic phonons in 2D Dirac crystals using the Lindhard model, exhibits a cuspidal point at the FSN condition. Strong variability of∂χ∂qpersists also at finite temperatures, whileχ(q)tend to infinity in the dynamic case where the speed of sound is small, albeit non negligible, over the Dirac-electron Fermi velocity. The implications of our findings for electron-acoustic phonon interaction and transport properties such as the phonon line width derived from the phonon self-energy will also be discussed.
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http://dx.doi.org/10.1088/1361-648X/acceee | DOI Listing |
Phys Rev Lett
December 2024
School of Physics, Beihang University, Haidian District, Beijing 100191, China.
Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies of α-Bi_{4}I_{4}, which reveals the realization of massive Dirac fermions in the (100) surface states without breaking the time-reversal symmetry. Combined with first-principles calculations, our experimental results indicate that the spontaneous symmetry breaking engenders two nondegenerate edge states at the opposite sides of monolayer Bi_{4}I_{4} after the structural phase transition, imparting mass to the Dirac fermions after taking the interlayer coupling into account.
View Article and Find Full Text PDFNat Commun
January 2025
Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, Germany.
Charge-carrier compensation in topological semimetals amplifies the Nernst signal and simultaneously degrades the Seebeck coefficient. In this study, we report the simultaneous achievement of both a large Nernst signal and an unsaturating magneto-Seebeck coefficient in a topological nodal-line semimetal TaAs single crystal. The unique dual-high transverse and longitudinal thermopowers are attributed to multipocket synergy effects: the combination of a strong phonon-drag effect and the two overlapping highly dispersive conduction and valence bands with electron-hole compensation and high mobility, promising a large Nernst effect; the third Dirac band causes a large magneto-Seebeck effect.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
Department of Chemistry, Indian Institute of Technology Delhi, Indian Institute of Technology Delhi, Hauz Khas, New delhi, New Delhi, Delhi, 110016, INDIA.
We report the detailed investigation of the magnetic, transport, and magnetocaloric effects of GdS- bSe by magnetic susceptibility χ(T ), isothermal magnetization M (H), resistivity ρ(T, H), and heat capacity Cp(T ) measurements, crystallizing in the ZrSiS-type tetragonal crystal system with space group P 4/nmm. Temperature-dependent magnetic susceptibility measurements revealed long-range antiferromagnetic ordering with two additional magnetic anomalies below N´eel temperature (TN ≈ 8.6 K), corroborated through magnetocaloric and specific heat studies.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China.
Terahertz (THz) emission arising from the second-order nonlinear photocurrent effects in two-dimensional quantum materials has attracted significant attention due to its high efficiency and ease of polarization manipulation. However, in centrosymmetric quantum materials, the terahertz emission is typically suppressed, caused by the directional symmetry of the photocurrent generated under femtosecond laser excitation. In this work, we report that wafer-scale type-II Dirac semimetal PtTe with lattice centrosymmetry exhibits remarkably high THz emission efficiency (2 orders of magnitude greater than that of a ZnTe nonlinear crystal with equivalent thickness) and pronounced polarization sensitivity at room temperature.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Physics, University of Liverpool, Oxford Street, Liverpool, L69 7ZE, UK.
Topological semimetals have recently garnered widespread interest in the quantum materials research community due to their symmetry-protected surface states with dissipationless transport which have potential applications in next-generation low-power electronic devices. One such material, [Formula: see text], exhibits Dirac nodal arcs and although the topological properties of single crystals have been investigated, there have been no reports in crystalline thin film geometry. We examined the growth of [Formula: see text] heterostructures on a range of single crystals by optimizing the electron beam evaporation of Pt and Sn and studied the effect of vacuum thermal annealing on phase and crystallinity.
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