Polarization Switching and Correlated Phase Transitions in Fluorite-Structure ZrO Nanocrystals.

Adv Mater

Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.

Published: July 2023

Unconventional ferroelectricity in fluorite-structure oxides enables tremendous opportunities in nanoelectronics owing to their superior scalability and silicon compatibility. However, their polarization order and switching process remain elusive due to the challenges of visualizing oxygen ions in nanocrystalline films. In this work, the oxygen shifting during polarization switching and correlated polar-nonpolar phase transitions are directly captured among multiple metastable phases in freestanding ZrO thin films by low-dose integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM). Bidirectional transitions between antiferroelectric and ferroelectric orders and interfacial polarization relaxation are clarified at unit-cell scale. Meanwhile, polarization switching is strongly correlated with Zr-O displacement in reversible martensitic transformation between monoclinic and orthorhombic phases and two-step tetrahedral-to-orthorhombic phase transition. These findings provide atomic insights into the transition pathways between metastable polymorphs and unravel the evolution of polarization orders in (anti)ferroelectric fluorite oxides.

Download full-text PDF

Source
http://dx.doi.org/10.1002/adma.202207736DOI Listing

Publication Analysis

Top Keywords

polarization switching
12
switching correlated
12
phase transitions
8
polarization
6
correlated phase
4
transitions fluorite-structure
4
fluorite-structure zro
4
zro nanocrystals
4
nanocrystals unconventional
4
unconventional ferroelectricity
4

Similar Publications

We propose a low-polarization-sensitive 1 × 2 carrier-injection-type silicon photonic switch consisting of a single Mach-Zehnder interferometer, an input-/output-side polarization splitter and rotators, bidirectional light injection, and an external optical circulator. A polarization-dependent loss (PDL) of 1.3 dB was achieved using the proposed structure, whereas a PDL exceeding 17 dB was observed without the structure.

View Article and Find Full Text PDF

Ferroelectricity with concomitant Coulomb screening in van der Waals heterostructures.

Nat Nanotechnol

January 2025

State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.

Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moiré superlattices, posing stringent requirements to constituent materials and twist angles.

View Article and Find Full Text PDF

Background: Meniere's disease (MD) affects 0.2% to 0.5% of the global population, with regional variations.

View Article and Find Full Text PDF

Dynamical Disorder in the Mesophase Ferroelectric HdabcoClO: A Machine-Learned Force Field Study.

J Phys Chem C Nanomater Interfaces

January 2025

Department of Mechanical Engineering and Technology Management, Norwegian University of Life Sciences, N-1433 AS, Norway.

Hybrid molecular ferroelectrics with orientationally disordered mesophases offer significant promise as lead-free alternatives to traditional inorganic ferroelectrics owing to properties such as room temperature ferroelectricity, low-energy synthesis, malleability, and potential for multiaxial polarization. The ferroelectric molecular salt HdabcoClO is of particular interest due to its ultrafast ferroelectric room-temperature switching. However, so far, there is limited understanding of the nature of dynamical disorder arising in these compounds.

View Article and Find Full Text PDF

In-Plane Polarization-Triggered WS-Ferroelectric Heterostructured Synaptic Devices.

ACS Appl Mater Interfaces

January 2025

School of Information Science and Technology, Fudan University, Shanghai 200433, China.

To date, various kinds of memristors have been proposed as artificial neurons and synapses for neuromorphic computing to overcome the so-called von Neumann bottleneck in conventional computing architectures. However, related working principles are mostly ascribed to randomly distributed conductive filaments or traps, which usually lead to high stochasticity and poor uniformity. In this work, a heterostructure with a two-dimensional WS monolayer and a ferroelectric PZT film were demonstrated for memristors and artificial synapses, triggered by in-plane ferroelectric polarization.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!