Metavalent bonding has attracted immense interest owing to its capacity to impart a distinct property portfolio to materials for advanced functionality. Coupling metavalent bonding to lone pair expression can be an innovative way to propagate lattice anharmonicity from lone pair-induced local symmetry-breaking via the soft -bonding electrons to achieve long-range phonon dampening in crystalline solids. Motivated by the shared chemical design pool for topological quantum materials and thermoelectrics, we based our studies on a three-dimensional (3D) topological insulator TlBiSe that held prospects for 6 dual-cation lone pair expression and metavalent bonding to investigate if the proposed hypothesis can deliver a novel thermoelectric material. Herein, we trace the inherent phononic origin of low thermal conductivity in n-type TlBiSe to dual 6 lone pair-induced intrinsic lattice shearing that strongly suppresses the lattice thermal conductivity to a low value of 1.1-0.4 Wm K between 300 and 715 K. Through synchrotron X-ray pair distribution function and first-principles studies, we have established that TlBiSe exists not in a monomorphous 3 structure but as a distribution of distorted configurations. Via a cooperative movement of the constituent atoms akin to a transverse shearing mode facilitated by metavalent bonding in TlBiSe, the structure shuttles between various energetically accessible low-symmetry structures. The orbital interactions and ensuing multicentric bonding visualized through Wannier functions augment the long-range transmission of atomic displacement effects in TlBiSe. With additional point-defect scattering, a κ of 0.3 Wm K was achieved in TlBiSeS with a maximum n-type thermoelectric figure of merit () of ∼0.8 at 715 K.
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http://dx.doi.org/10.1021/jacs.3c02146 | DOI Listing |
Adv Mater
December 2024
Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany.
A systematic study of the impact of film thickness on the properties of thin Bi films is presented. To this end, epitaxial films of high quality have been grown on a Si (111) substrate with thicknesses ranging from 1.9 to 29.
View Article and Find Full Text PDFInorg Chem
November 2024
Department of Chemical Engineering, Ben-Gurion University of the Negev, Be'er-Sheva 8410501, Israel.
Adv Mater
December 2024
Physikalisches Institut IA, RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany.
Nat Commun
October 2024
Institute of Physics (IA), RWTH Aachen University, 52056, Aachen, Germany.
Nat Commun
September 2024
National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, China.
Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport.
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