AI Article Synopsis
- The research focused on optimizing n-doped HgTe colloidal quantum dots to achieve a specific intraband transition in the long-wave infrared, particularly around 10 μm due to spin-orbit effects.
- The resulting quantum dots exhibited a narrow line width and a stronger absorption coefficient compared to the interband transition, enhancing their performance in infrared applications.
- Temperature changes significantly affected the transition properties, with a dramatic blueshift of the intraband transition and a redshift of the interband transition, while the optimally doped photoconductive film demonstrated notable detectivity in the 8-12 μm range.
Article Abstract
The synthesis of n-doped HgTe colloidal quantum dots was optimized to produce samples with a 1S-1P intraband transition in the long-wave infrared (8-12 μm). The spin-orbit splitting of 1P states places the 1S-1P transition around 10 μm. The narrow line width of 130 cm at 300 K is limited by the size distribution. This narrowing leads to an absorption coefficient about 5 times stronger than is possible with the HgTe CQD interband transition at similar energies. From 300 to 80 K, the intraband transition blueshifts by 90 cm, while the interband transition redshifts by 350 cm. These shifts are assigned to the temperature dependence of the band structure. With ∼2 electrons/dot doping at 80 K, a photoconductive film of 80 nm thickness on a quarter wave reflector substrate showed a detectivity (*) of ∼10 Jones at 500 Hz in the 8-12 μm range.
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| http://dx.doi.org/10.1021/acsnano.2c12636 | DOI Listing |
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