AI Article Synopsis
- Two-dimensional (2D) semiconductors offer exciting opportunities for smaller CMOS logic circuits, but their advancement is hindered by the need for better high-dielectric materials.
- Researchers have developed large-area, liquid-metal-printed ultrathin GaO dielectrics, providing smooth interfaces essential for 2D electronics.
- These dielectrics exhibit excellent properties like a small equivalent oxide thickness (≈1 nm) and low gate leakage currents, showing promise for future low-power nanoelectronics.
Article Abstract
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high- dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOTs), excellent gate control, and low leakage currents. Here, large-area liquid-metal-printed ultrathin GaO dielectrics for 2D electronics and optoelectronics are reported. The atomically smooth GaO/WS interfaces enabled by the conformal nature of liquid metal printing are directly visualized. Atomic layer deposition compatibility with high- GaO/HfO top-gate dielectric stacks on a chemical-vapor-deposition-grown monolayer WS is demonstrated, achieving EOTs of ∼1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultrascaled low-power logic circuits. These results show that liquid-metal-printed oxides can bridge a crucial gap in dielectric integration of 2D materials for next-generation nanoelectronics.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acsnano.3c02128 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!