We propose a novel integrated model for the recovery of tantalum from tantalum-rich waste using a combination of hydrometallurgical and bio-metallurgical processes. To this end, leaching experiments with heterotrophs (Pseudomonas putida, Bacillus subtilis and Penicillium simplicissimum) were carried out. The heterotrophic fungal strain leached manganese with an efficiency of 98%; however, no tantalum was detected in the leachate. An unidentified species did mobilise 16% tantalum in 28 days in an experiment with non-sterile tantalum capacitor scrap. Attempts to cultivate isolate and identify these species failed. The results of a range of leaching trials resulted in an effective strategy for Ta recovery. A bulk sample of homogenised Ta capacitor scrap was first subjected to microbial leaching using Penicillium simplicissimum, which solubilised manganese and base metals. The residue was subjected to the second leach using 4 M HNO. This effectively solubilised silver and other impurities. The residue collected after the second leach was pure tantalum in concentrated form. The hybrid model produced derives from observations from previous independent studies and shows that we can effectively recover tantalum along with silver and manganese in an efficient and environmentally friendly manner from tantalum capacitor scrap.
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http://dx.doi.org/10.1007/s11356-023-26592-3 | DOI Listing |
ACS Appl Nano Mater
June 2024
Department of Physical Chemistry & Electrochemistry, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland.
Anodization of transition metals, particularly the valve metals (V, W, Ti, Ta, Hf, Nb, and Zr) and their alloys, has emerged as a powerful tool for controlling the morphology, purity, and thickness of oxide nanostructures. The present review is focused on the advances in the synthesis of micro/nanostructures of anodic tantalum oxides (ATO) in inorganic, organic, and mixed inorganic-organic type electrolytes with critically highlighting anodization parameters, such as applied voltage, current, time, and electrolyte temperature. Particularly, the growth of ATO nanostructures in fluoride containing electrolytes and their applications are briefly covered.
View Article and Find Full Text PDFSensors (Basel)
April 2024
Brigham and Women's Hospital, Boston, MA 02115, USA.
Purpose: We investigated the characteristics of radiation-induced current in nano-porous pellet and thin-film anodized tantalum exposed to kVp X-ray beams. We aim at developing a large area (≫cm) thin-film radiation sensor for medical, national security and space applications.
Methods: Large area (few cm) micro-thin Ta foils were anodized and coated with a counter electrode made of conductive polymer.
Nanoscale
February 2024
School of Engineering & Materials Science, Queen Mary University of London, Mile End Road, E1 4NS London, UK.
The temperature-controlled relationship between the mechanical properties and deformation mechanism of tantalum (Ta) enables the extension of its application potential in various areas of life, including energy and electronics industries. In this work, the microstructure and deformation behavior of nanocrystalline superior-deformed Ta have been investigated in a wide temperature range. The structural analysis revealed that the high-performance Ta consists of several different substructures, with an average size of about 20 nm.
View Article and Find Full Text PDFACS Omega
January 2024
School of Space Science and Physics, Shandong University, Weihai, 264209, China.
Tantalum (Ta) is a valuable and rare metal that is extensively used in the production of implant materials and high-performance capacitors. However, a convenient and effective method for the separation of Ta from other compounds has yet to be developed. On the basis of first-principle density functional theory (DFT), we simulated the vibrational spectrum of potassium heptafluorotantalate (KTaF).
View Article and Find Full Text PDFAdv Sci (Weinh)
July 2023
Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA.
Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces.
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