Depending on thermal and pressure conditions, AgInS exhibits various crystal structures. In this study, we synthesized a high-purity polycrystalline sample of trigonal AgInS, which is a layered compound, using a high-pressure synthesis technique. The crystal structure was investigated by synchrotron powder X-ray diffraction and the Rietveld refinement. On the basis of band calculation, X-ray photoelectron spectroscopy, and electrical resistance measurements, we found that the obtained trigonal AgInS is a semiconductor. Temperature dependencies of electrical resistance of AgInS were measured by a diamond anvil cell up to 31.2 GPa. Although semiconducting behavior was suppressed with pressure, metallic behavior was not observed within the pressure range investigated in this study.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10061640 | PMC |
| http://dx.doi.org/10.1021/acsomega.2c08289 | DOI Listing |
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