Crystallization often occurs in the processing of amorphous alloys, causing the materials lose their excellent properties. The study adopts chemical mechanical polishing of amorphous alloys, presenting the effect of the rotational speed of the polishing turntable, size of abrasive, polishing pressure, and oxidant concentration. The Taguchi method is used to find the best processing parameters, and AFM is used to characterize the machined material surface. At the same time, XPS is used to detect the change of oxide film composition with the addition of oxidant. The results indicate the optimum process parameters: rotational speed of the polishing turntable is 75 r/min, polishing pressure is 28.3 kPa, the size of abrasive is 0.5 μm, and the size of abrasive is a significant factor affecting surface roughness . In addition, as the size of abrasive increases, the material removal rate increases while the surface roughness increases. At pH 10, with an abrasive particle size of 0.5 μm, as the HO concentration increases, the first rapidly decreases at 0.21 wt.% HO, and then gradually increases, while the decreases. Furthermore, with the addition of oxidant, the main composition of the surface oxide film changes from oxide to hydroxide, and the contents of Zr and Cu/Cu elements increase. The findings can provide a feasible chemical mechanical polishing process for zirconium-based amorphous alloys to obtain a satisfactory polishing effect.
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http://dx.doi.org/10.3390/mi14030584 | DOI Listing |
Rev Sci Instrum
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Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China.
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