With the recently increasing prevalence of deep learning, both academia and industry exhibit substantial interest in neuromorphic computing, which mimics the functional and structural features of the human brain. To realize neuromorphic computing, an energy-efficient and reliable artificial synapse must be developed. In this study, the synaptic ferroelectric field-effect-transistor (FeFET) array is fabricated as a component of a neuromorphic convolutional neural network. Beyond the single transistor level, the long-term potentiation and depression of synaptic weights are achieved at the array level, and a successful program-inhibiting operation is demonstrated in the synaptic array, achieving a learning accuracy of 79.84% on the Canadian Institute for Advanced Research (CIFAR)-10 dataset. Furthermore, an efficient self-curing method is proposed to improve the endurance of the FeFET array by tenfold, utilizing the punch-through current inherent to the device. Low-frequency noise spectroscopy is employed to quantitatively evaluate the curing efficiency of the proposed self-curing method. The results of this study provide a method to fabricate and operate reliable synaptic FeFET arrays, thereby paving the way for further development of ferroelectric-based neuromorphic computing.
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http://dx.doi.org/10.1002/advs.202207661 | DOI Listing |
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January 2025
Bernoulli Institute for Mathematics, Computer Science and Artificial Intelligence, University of Groningen, Nijenborgh 9, 9747 AG Groningen, The Netherlands.
The increase in computational power demand led by the development of Artificial Intelligence is rapidly becoming unsustainable. New paradigms of computation, which potentially differ from digital computation, together with novel hardware architecture and devices, are anticipated to reduce the exorbitant energy demand for data-processing tasks. Memristive systems with resistive switching behavior are under intense research, given their prominent role in the fabrication of memory devices that promise the desired hardware revolution in our intensive data-driven era.
View Article and Find Full Text PDFSensors (Basel)
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Industrial Systems Institute (ISI), Athena Research and Innovation Center, 26504 Patras, Greece.
The integration of deep learning (DL) into image processing has driven transformative advancements, enabling capabilities far beyond the reach of traditional methodologies. This survey offers an in-depth exploration of the DL approaches that have redefined image processing, tracing their evolution from early innovations to the latest state-of-the-art developments. It also analyzes the progression of architectural designs and learning paradigms that have significantly enhanced the ability to process and interpret complex visual data.
View Article and Find Full Text PDFJ Clin Med
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Department of Neurosurgery, "Carol Davila" University of Medicine and Pharmacy, 020021 Bucharest, Romania.
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View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Flexible memristors are promising candidates for multifunctional neuromorphic computing applications, overcoming the limitations of conventional computing devices. However, unpredictable switching behavior and poor mechanical stability in conventional memristors present significant challenges to achieving device reliability. Here, a reliable and flexible memristor using zirconium-oxo cluster (ZrOOH(OMc)) as the resistive switching layer is demonstrated.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Ferroelectric HfZrO (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P) switching of binary ferroelectric HZO capacitor synapses.
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