AI Article Synopsis
- Reducing contact resistance is crucial for enhancing transistors made from two-dimensional materials, and this study introduces a method to achieve that using partially sulfur-replaced edge contacts.
- The researchers created a new material called WSX by substituting sulfur in the WS monolayer with elements like phosphorus and chlorine to reduce the Schottky barrier height, which in turn lowers contact resistance.
- The results show that the new WSX-buffered contacts can attain very low contact resistances (142 and 173 Ω·μm) for different types of transistor configurations, while also confirming the stability of WSX at room temperature through molecular dynamics simulations.
Article Abstract
Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type of partially sulfur-replaced edge contact metal/WSX/WS in order to lower the Schottky barrier height and in turn reduce the contact resistance. Here, the sulfur replacements produce a segment of the metamaterial WSX (X = P, As, F, and Cl), using group V or halogen atoms to substitute sulfur atoms on one side of a WS monolayer. We further compare the effects of such sulfur replacements on the interface metallization and bonding. Such WSX-buffered contacts exhibit contact resistances as low as 142 and 173 Ω·μm for the p-type Pt/WSP/WS and n-type Ti/WSCl/WS edge contacts, respectively. Moreover, ab initio molecular dynamics is employed to observe a stable standalone WSX monolayer at room temperature.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034831 | PMC |
| http://dx.doi.org/10.1021/acsomega.2c08275 | DOI Listing |
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